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1、IC Transistors and Resistors,Resistors Bipolar Transistors MOS DMOS,Resistor Voltage Coefficient,Figure 1 A p type region in an n type tub forms the resistor.,http:/ Voltage Coefficient,Resistor Temperature Coefficient,Resistor Voltage limits,The maximum resistor voltage is NOT defined by the tub it
2、s sitting in!,The voltage rating of the tub determines the spacing of PHV to Epi,Lateral PNP Saturation,http:/ current NPN/PNP biasing,Whats the lowest current bipolars can be biased at?,Lateral PNP,ICmin 5uA,Low current NPN/PNP biasing,Whats the lowest current bipolars can be biased at?,Vertical PN
3、P,ICmin 20nA,Low current NPN/PNP biasing,Whats the lowest current bipolars can be biased at?,NPN,ICmin 20nA,MOS Safe Operating Area,Hot carrier injection limits NMOS operating voltage,LV NMOS Hot Carrier Injection,Maximum Vds determined from HCI measurements 10% degradation in 10 yrs Transient Vds r
4、ating based on 10% duty cycle,LV LVT PMOS drain-source leakage,Drain-source leakage determines maximum Vds at high temperature Minimum channel length targeted based on process variation and independent SEM measurement,150C,27C,DMOS Specific Rdson,Rsp = Rdson x transistor active area,transistor activ
5、e area = # cells x cell area,DMOS Specific Rdson,More components to Rdson than just channel resistance RCH + REpi + RBL + RMetal,Series resistance causes bend in ID vs. VG curve,A useful way to extract DMOS series resistance,(1),(2),(3),Substituting (2) into (3) gives,DMOS Clamped Inductive Switching,Clamping the flyback voltage below the DMOS breakdown increases energy capability. Power dissipation eventually allows parasitic bipolar to turn on, killing device,Energy capability can determine device size,
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