《BS-EN-61643-341-2001.pdf》由会员分享,可在线阅读,更多相关《BS-EN-61643-341-2001.pdf(68页珍藏版)》请在三一文库上搜索。
1、BRITISH STANDARD BS EN 61643-341:2001 Components for low-voltage surge protective devices Part 341: Specification for thyristor surge suppressors (TSS) The European Standard EN 61643-341:2001 has the status of a British Standard ICS 31.080.20 NO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY
2、COPYRIGHT LAW Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 08:30:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS EN 61643-341:2001 This British Standard, having been prepared under the direction of the Electrotechnical Sector Policy and Strategy Committee, was published under the authorit
3、y of the Standards Policy and Strategy Committee on 15 March 2002 BSI 15 March 2002 ISBN 0 580 39102 7 National foreword This British Standard is the official English language version of EN 61643-341:2001. It was derived by CENELEC from IEC 61643-341:2001. The CENELEC common modifications have been
4、implemented at the appropriate places in the text and are indicated by common modification tags ?. The UK participation in its preparation was entrusted by Technical Committee PEL/37, Surge arresters, to Subcommittee PEL/37/2, Surge arresters Low voltage, which has the responsibility to: A list of o
5、rganizations represented on this subcommittee can be obtained on request to its secretary. From 1 January 1997, all IEC publications have the number 60000 added to the old number. For instance, IEC 27-1 has been renumbered as IEC 60027-1. For a period of time during the change over from one numberin
6、g system to the other, publications may contain identifiers from both systems. Cross-references Attention is drawn to the fact that CEN and CENELEC Standards normally include an annex which lists normative references to international publications with their corresponding European publications. The B
7、ritish Standards which implement these international or European publications may be found in the BSI Standards Catalogue under the section entitled “International Standards Correspondence Index”, or by using the “Find” facility of the BSI Standards Electronic Catalogue. A British Standard does not
8、purport to include all the necessary provisions of a contract. Users of British Standards are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. aid enquirers to understand the text; present to the responsible inte
9、rnational/European committee any enquiries on the interpretation, or proposals for change, and keep the UK interests informed; monitor related international and European developments and promulgate them in the UK. Summary of pages This document comprises a front cover, an inside front cover, the EN
10、title page, pages 2 to 65 and a back cover. The BSI copyright date displayed in this document indicates when the document was last issued. Amendments issued since publication Amd. No. DateComments Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 08:30:25 GMT+00:00 2006, Uncontrolled Copy, (c)
11、BSI EUROPEAN STANDARDEN 61643-341 NORME EUROPENNE EUROPISCHE NORMDecember 2001 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050 Brussels 2
12、001 CENELEC -All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 61643-341:2001 E ICS 31.080.10 English version Components for low-voltage surge protective devices Part 341: Specification for thyristor surge suppressors (TSS) (IEC 61643-341:200
13、1) Composants pour parafoudres basse tension Partie 341: Spcifications pour les parafoudres thyristor (CEI 61643-341:2001) Bauelemente fr berspannungsschutzgerte fr Niederspannung Teil 341: Festlegungen fr Suppressordioden (TSS) (IEC 61643-341:2001) This European Standard was approved by CENELEC on
14、2001-12-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may
15、be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to t
16、he Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic, Denmark, Finland, France, Germany, Greece, Iceland, Ireland, Italy, Luxembourg, Malta, Netherlands, Norway, Portugal, Spain, Sweden,
17、Switzerland and United Kingdom. Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 08:30:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI Foreword The text of document 37B/58/FDIS, future edition 1 of IEC 61643-341, prepared by SC 37B, Specific components for surge arresters and surge protective de
18、vices, of IEC TC 37, Surge arresters, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 61643-341 on 2001-12-01. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by e
19、ndorsement(dop) 2002-09-01 latest date by which the national standards conflicting with the EN have to be withdrawn(dow) 2004-12-01 Annexes designated “normative“ are part of the body of the standard. Annexes designated “informative“ are given for information only. In this standard, annexes A and ZA
20、 are normative and annex B is informative. Annex ZA has been added by CENELEC. _ Page 2 EN 61643341:2001 BSI 15 March 2002 Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 08:30:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI CONTENTS 1Scope 6 2Normative references. 6 3Terms, letter symbols and
21、definitions. 7 3.1Parametric terms, letter symbols and definitions. 7 3.2Terms and definitions for TSS, terminals and characteristic terminology13 3.2.1TSS .13 3.2.2Terminals.14 3.2.3Characteristic terminology15 4Basic function and component description 18 4.1TSS types18 4.2Basic device structure .2
22、0 4.3Device equivalent circuit21 4.4Switching quadrant characteristics.22 4.4.1Off-state region22 4.4.2Breakdown region22 4.4.3Negative resistance region.23 4.4.4On-state region23 4.5Performance criteria of a TSS23 4.5.1System loading 23 4.5.2Equipment protection.24 4.5.3Durability .24 4.6Additional
23、 TSS structures 24 4.6.1Gated TSS.24 4.6.2Unidirectional blocking TSS .25 4.6.3Unidirectional conducting TSS .26 4.6.4Bidirectional TSS .26 4.6.5Bidirectional TRIAC TSS27 5Standard test methods27 5.1Test conditions 27 5.1.1Standard atmospheric conditions .27 5.1.2Measurement errors.28 5.1.3Measureme
24、nt accuracy28 5.1.4Designated impulse shape and values .28 5.1.5Multiple TSS 28 5.1.6Gated TSS testing .28 5.2Service conditions .29 5.2.1Normal service conditions29 5.2.2Abnormal service conditions 29 5.3Failures and fault modes .29 5.3.1Degradation failure 29 5.3.2High off-state current fault mode
25、30 5.3.3High reverse current fault mode.30 5.3.4High breakover voltage fault mode.30 5.3.5Low holding current fault mode 30 5.3.6Catastrophic (cataleptic) failure .30 5.3.7Short-circuit fault mode30 5.3.8Open-circuit fault mode30 Page 3 EN 61643341:2001 BSI 15 March 2002 Licensed Copy: sheffieldun s
26、heffieldun, na, Fri Nov 10 08:30:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI 5.3.9Critical failure 30 5.3.10 Fail-safe 31 5.4Rating test procedures.31 5.4.1Repetitive peak off-state voltage VDRM31 5.4.2Repetitive peak on-state current, ITRM32 5.4.3Non-repetitive peak on-state current, ITSM33 5.4.4
27、Non-repetitive peak pulse current, IPPSM34 5.4.5Repetitive peak reverse voltage, VRRM.35 5.4.6Non-repetitive peak forward current, IFSM.35 5.4.7Repetitive peak forward current, IFRM.36 5.4.8Critical rate of rise of on-state current, di/dt .36 5.5Characteristic test procedures .37 5.5.1Off-state curr
28、ent, ID.37 5.5.2Repetitive peak off-state current, IDRM.38 5.5.3Repetitive peak reverse current, IRRM.38 5.5.4Breakover voltage, V(BO) and current, I(BO).38 5.5.5On-state voltage, VT40 5.5.6Holding current, IH.44 5.5.7Off-state capacitance, Co.44 5.5.8Breakdown voltage, V(BR).46 5.5.9Switching volta
29、ge, VS and current, IS47 5.5.10 Forward voltage, VF.48 5.5.11 Peak forward recovery voltage, VFRM.48 5.5.12 Critical rate of rise of off-state voltage, dv/dt49 5.5.13 Temperature coefficient of breakdown voltage, ?V(BR)49 5.5.14 Variation of holding current with temperature.50 5.5.15 Temperature der
30、ating 50 5.5.16 Thermal resistance, Rth.50 5.5.17 Transient thermal impedance, Zth(t)51 5.5.18 Gate-to-adjacent terminal peak off-state voltage and peak off-state gate current, VGDM, IGDM53 5.5.19 Gate reverse current, adjacent terminal open, IGAO, IGKO53 5.5.20 Gate reverse current, main terminals
31、short-circuited, IGAS, IGKS54 5.5.21 Gate reverse current, on-state, IGAT, IGKT.54 5.5.22 Gate reverse current, forward conducting state, IGAF, IGKF55 5.5.23 Gate switching charge, QGS56 5.5.24 Peak gate switching current, IGSM58 5.5.25 Gate-to-adjacent terminal breakover voltage, VGK(BO), VGA(BO).5
32、9 Page 4 EN 61643341:2001 BSI 15 March 2002 Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 08:30:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI Annex A (normative) Abnormal service conditions60 A.1Environmental conditions.60 A.1.1Climatic conditions.60 A.1.2Biological conditions 60 A.1.3Chemi
33、cally active substances 60 A.1.4Mechanically or electrically active substances .60 A.1.5Contaminating fluids 60 A.2Mechanical conditions .60 A.3Miscellaneous factors 61 Annex B (informative) US verification standards with referenced impulse waveforms .62 B.1Central office equipment verification62 B.
34、2Customer premise equipment verification 62 B.3Test waveforms .62 Annex ZA (normative) Normative references to international publications with their corresponding European publications 63 Page 5 EN 61643341:2001 BSI 15 March 2002 Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 08:30:25 GMT+00
35、:00 2006, Uncontrolled Copy, (c) BSI COMPONENTS FOR LOW-VOLTAGE SURGE PROTECTIVE DEVICES Part 341: Specification for thyristor surge suppressors (TSS) 1 Scope This part of IEC 61643 is a test specification standard for thyristor surge suppressor (TSS) components designed to limit overvoltages and di
36、vert surge currents by clipping and crowbarring actions. Such components are used in the construction of surge protective devices, particularly as they apply to telecommunications. This standard contains information on terms, letter symbols, and definitions basic functions, configurations and compon
37、ent structure service conditions and fault modes rating verification and characteristic measurement 2 Normative references The following normative documents contain provisions which, through reference in this text, constitute provisions of this part of IEC 61643. For dated references, subsequent ame
38、nd- ments to, or revisions of, any of these publications do not apply. However, parties to agreements based on this part of IEC 61643 are encouraged to investigate the possibility of applying the most recent editions of the normative documents indicated below. For undated references, the latest edit
39、ion of the normative document referred to applies. Members of IEC and ISO maintain registers of currently valid International Standards. IEC 60050(191), International Electrotechnical Vocabulary Chapter 191: Dependability and quality of service IEC 60050(702), International Electrotechnical Vocabula
40、ry Chapter 702: Oscillations, signals and related devices IEC 60099-4, Surge arrestors Part 4: Metal-oxide surge arrestors without gaps for ?A.C.? systems IEC 60721-3-3, Classification of environmental conditions Part 3: Classification of groups of environmental parameters and their severities Secti
41、on 3: Stationary use at weather- protected locations IEC 60721-3-9, Classification of environmental conditions Part 3: Classification of groups of environmental parameters and their severities Section 9: Microclimates inside products IEC 60747-1:1983, Semiconductor devices Discrete devices and integ
42、rated circuits Part 1: General IEC 60747-2: 1983, Semiconductor devices Discrete devices and integrated circuits Part 2: Rectifier diodes Page 6 EN 61643341:2001 BSI 15 March 2002 Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 08:30:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI IEC 60747-6:1
43、983, Semiconductor devices Discrete devices and integrated circuits Part 6: Thyristors NOTE The TSS has substantially different characteristics and usage to the type of thyristor covered by IEC 60747-6. These differences necessitate the modification of some characteristic descriptions and the introd
44、uction of new terms. Such changes and additions are indicated in clause 3. IEC 60749:1996, Semiconductor devices Mechanical and climatic test methods IEC 61000-4-5:1995, Electromagnetic compatibility (EMC) Part 4: Testing and measurement techniques Section 5: Surge immunity test IEC 61083-1:1991 Dig
45、ital recorders for measurements in high-voltage impulse tests Part 1: Requirements for digital recorders ITU-T Recommendation K.20:1996 Resistibility of telecommunication switching equipment to overvoltages and overcurrents ITU-T Recommendation K.21:1996 Resistibility of subscribers terminal to over
46、voltages and overcurrents ITU-T Recommendation K.28:1993 Characteristics of semi-conductor arrester assemblies for the protection of telecommunications installations 3 Terms, letter symbols and definitions For the purpose of this part of IEC 61643, the following definitions apply. 3.1 Parametric ter
47、ms, letter symbols and definitions Where appropriate, terms, letter symbols and definitions are used from existing thyristor (IEC 60747-6) and rectifier diode (IEC 60747-2) standards. NOTE 1 IEC 60747-1, chapter V, clause 2.1.1, states “IEC 60027 recommends the letters V and v only as reserve symbol
48、s for voltage; however, in the field of semiconductor devices, they are so widely used that in this publication they are on the same plane as U and u.“ This standard uses the letters V and v for voltage with the letters U and u as alternatives. NOTE 2 When several distinctive forms of letter symbol
49、exist, the most commonly used form is given first. 3.1.1 main terminal ratings listed ratings cover the appropriate requirements of the blocking, conducting and switching quadrants 3.1.1.1 repetitive peak off-state voltage, VDRM rated maximum (peak) instantaneous voltage that may be applied in the off-state conditions including all ?D.C.? and repetitive voltage components 3.1.1.2 repetitive peak on-state current, ITRM rated maximum (peak) value of ?A.C.? power frequency on-state current of specified w
链接地址:https://www.31doc.com/p-3743721.html