IC资料-EMX1 UMX1N IMX1.pdf
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1、EMX1 / UMX1N / IMX1 Transistors 1/3 General purpose transistors (dual transistors) EMX1 / UMX1N / IMX1 ! ! ! !Features 1) Two 2SC2412K chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating
2、 interference. 4) Mounting cost and area can be cut in half. ! ! ! !Structure Epitaxial planar type NPN silicon transistor ! ! ! !Equivalent circuit EMX1 / UMX1NIMX1 (3)(2)(1) (4)(6)(5) Tr2 Tr1 (3)(2)(1) (4)(6)(5) Tr2 Tr1 The following characteristics apply to both Tr1 and Tr2. ! ! ! !Absolute maxim
3、um ratings (Ta = 25C) ParameterSymbolLimitsUnit VCBO60V 50V V VCEO VEBO7 ICmA150 Tj150C Tstg55+150C PC EMX1, UMX1N150 (TOTAL) mW IMX1300 (TOTAL) 1 2 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Power dissipation 1 12
4、0mW per element must not be exceeded. 2 200mW per element must not be exceeded. ! ! ! !External dimensions (Units : mm) ROHM : EMT6 EMX1 ROHM : UMT6 EIAJ : SC-88 UMX1N Abbreviated symbol : X1 Abbreviated symbol : X1 Abbreviated symbol : X1 ROHM : SMT6 EIAJ : SC-74 IMX1 Each lead has same dimensions
5、Each lead has same dimensions Each lead has same dimensions 0to0.1 (6) 2.0 1.30.9 0.15 0.7 0.1Min. 2.1 0.65 0.2 1.25 (1) 0.65 (4) (3) (2) (5) (6)(5) (4) 0.3to0.6 0.150.3 1.1 0.8 0to0.1 (3) 2.8 1.6 1.9 2.9 0.95 (2) 0.95 (1) 0.22 1.2 1.6 (1) (2)(5) (3) (6) (4) 0.13 0.5 0.50.5 1.0 1.6 EMX1 / UMX1N / IM
6、X1 Transistors 2/3 ! ! ! !Electrical characteristics (Ta = 25C) ParameterSymbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Cob Min. 60 50 7 120 2 0.1 0.1 560 0.4 3.5 VIC=50A IC=1mA IE=50A VCB=60V VEB=7V VCE=6V, IC=1mA IC/IB=50mA/5mA V V A A V PF Typ. Max. UnitConditions fT180VCE=12V, IE=2mA, f=100MHz
7、 VCB=12V, IE=0A, f=1MHz MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Collector-emitter saturation voltage Output capacitance ! ! ! !Packaging spec
8、ifications Package CodeTNT110 30003000 Taping Basic ordering unit (pieces) UMX1N T2R 8000 EMX1 IMX1 Type ! ! ! !Electrical characteristic curves 0 0.1 0.2 0.5 2 20 50 0.20.40.60.81.01.21.41.6 1 5 10 VCE=6V COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagati
9、on characteristics 25C 55C Ta=100C 0 20 40 60 80 100 0.40.81.21.62.00 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 0.05mA 0.10mA 0.15mA 0.25mA 0.30mA 0.35mA 0.20mA Ta=25C IB=0A 0.40mA 0.50mA 0.45mA Fig.2 Grounded emitter output characteristics ( I ) 0 0 2 8 10 481216 4 6 20 IB=
10、0A Ta=25C COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 3A 6A 9A 12A 15A 18A 21A 24A 27A 30A Fig.3 Grounded emitter output characteristics ( II ) EMX1 / UMX1N / IMX1 Transistors 3/3 0.2 20 10 0.5125102050 100 200 50 100 200 500 VCE=5V 3V 1V Ta=25C DC CURRENT GAIN : hFE COLLECTOR
11、 CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( I ) 0.20.5125102050 100 200 20 10 50 100 200 500 25C 55C Ta=100C VCE=5V DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( II ) 0.20.5125102050 100 200 0.01 0.02 0.05 0.1 0.2 0.5 IC/IB=50 20
12、 10 Ta=25C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current 0.2 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (mA) 0.01 0.02 0.05 0.1 0.2 0.5 0.5125102050 100 200 IC/IB=50 20 10 Ta=25C Fig.
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