JIS-K-0148-2005-ENG.pdf
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1、J IS JAPANESE I N DUSTR IAL STANDARD Translated and Published by Japanese Standards Association JIS K 0148:2005 (IS0 14706 : 2000) (OSTEC/JSA) Surface chemical analysis- Determination of surface elemental contamination on silicon wafers by total-ref lection X-ray f I uorescence (TXR F) spectroscopy
2、ICs 71.040.40 Reference number : JIS K 0148 : 2005 (E) PROTECTED BY COPYRIGHT 16 S Copyright Japanese Standards Association Provided by IHS under license with JSALicensee=IHS Employees/1111111001, User=Wing, Bernie Not for Resale, 03/13/2007 23:05:38 MDTNo reproduction or networking permitted withou
3、t license from IHS -,-,- K 0145 : 2005 (IS0 14706 : 2000) Foreword This translation has been made based on the original Japanese Industrial Standard established by the Minister of Economy, Trade and Industry through deliberations at the Japanese Industrial Standards Committee according to the propos
4、al of establishing a Japanese Industrial Standard from The Foundation of Osaka Science to prepare Japanese Industrial Standard conforming with International Standard; and to propose a draft of an International Standard which is based on Japanese Industrial Standard. Attention is drawn to the possibi
5、lity that some parts of this Standard may conflict with a patent right, application for a patent after opening to the public, utility model right or application for registration of utility model after opening to the public which have technical properties. The relevant Minister and the Japanese Indus
6、trial Standards Committee are not responsible for identifying the patent right, application for a patent after opening to the public, utility model right or application for registration of utility model after opening to the public which have the said technical properties. Date of Establishment: 2005
7、-03-20 Date of Public Notice in Official Gazette: 2005-03-22 Investigated by: Japanese Industrial Standards Committee Standards Board Technical Committee on Basic Engineering JIS K 014s : 2005, First English edition published in 2005-07 Translated and published by: Japanese Standards Association 4-1
8、-24, Akasaka, Minato-ku, Tokyo, 107-S440 JAPAN In the event of any doubts arising as to the contents, the original JIS is to be the final authority. O JSA 2005 All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form or by any means, elec
9、tronic or mechanical, including photocopying and microfilm, without permission in writing from the publisher. Printed in Japan “/AT PROTECTED BY COPYRIGHT Copyright Japanese Standards Association Provided by IHS under license with JSALicensee=IHS Employees/1111111001, User=Wing, Bernie Not for Resal
10、e, 03/13/2007 23:05:38 MDTNo reproduction or networking permitted without license from IHS -,-,- K 0148 : 2005 (IS0 14706 : 2000) Contents Page Introduction . 1 1 Scope 1 2 Normative references 2 3 Definitions 2 3.1 total reflection 2 3.2 glancing angle 2 3.3 critical angle . 2 3.4 VPD-TXRF method 2
11、 3.5 spurious peaks . 3 4 Abbreviated terms . 3 5 Principle 3 6 Apparatus 4 7 Environment for specimen preparation and measurement . 4 8 Calibration reference materials 4 9 Safety . 5 10 Measurement procedure . 5 10.1 Preparation for measurement . 5 10.2 Preparing a calibration curve . 6 10.3 Measur
12、ement of a test specimen 6 11 Expression of results 7 11.1 Method of calculation 7 11.2 Blank correction . 7 12 Precision 8 13 Test report 8 (i) PROTECTED BY COPYRIGHT Copyright Japanese Standards Association Provided by IHS under license with JSALicensee=IHS Employees/1111111001, User=Wing, Bernie
13、Not for Resale, 03/13/2007 23:05:38 MDTNo reproduction or networking permitted without license from IHS -,-,- K O148 : 2005 (IS0 14706 : 2000) Annex A (informative) Annex B (informative) Annex C (informative) Annex D (informative) Annex E (informative) Annex F (informative) Bibliography Reference ma
14、terials . 9 Relative sensitivity factor . 10 Preparation of reference materials5 13 VPD-TXRF method 17 Glancing-angle settings . 19 International inter-laboratory test results 23 26 (ii) PROTECTED BY COPYRIGHT Copyright Japanese Standards Association Provided by IHS under license with JSALicensee=IH
15、S Employees/1111111001, User=Wing, Bernie Not for Resale, 03/13/2007 23:05:38 MDTNo reproduction or networking permitted without license from IHS -,-,- JAPANESE INDUSTRIAL STANDARD JIS K 0148 : 2005 (IS0 14706 : 2000) Surface chemical analysis- Determination of surface elemental contamination on sil
16、icon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy Introduction This Japanese Industrial Standard has been prepared based on the first edition of IS0 14706 Surface chemical analysis-Determination of surface el- emental Contamination on silicon wafers by total-reflection X-ray flu
17、orescence (TXRF) spectroscopy published in 2000 without modifying the technical contents of the origi- nal International Standard. The portions given dotted underlines are the matters not stated in the original The numbers in the brackets I following the terms and writing in the forward, contents, t
18、ext and annex indicate the number of the bibliography. IS0 14706 was prepared for the measurement of surface elemental contamina- tion on silicon wafers on the basis of three existing standards: ASTM F 1526, SEMI Standard M33 and a UCS (Ultra-Clean Society) standard published by the Institute of Bas
19、ic Semiconductor Technology Development. TXRF needs reference materials to perform quantitative analyses. Certified ref- erence materials are not available at low densities of 10“ atoms/cm2. Even if they were available, the possibility of contamination from the environment reduces the shelf life of
20、such reference materials. Therefore, the TXRF reference materials should be prepared and analysed for Cali- bration by each relevant analytical laboratory. Thus, two standards, one for the TXRF measurement procedure and the other for the preparation of reference materials, are necessary. This Standa
21、rd concerns the former part. International Standard. 1 Scope This Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epi- taxial silicon wafer surfaces. The method is applicable to: - elements of atomic numbe
22、r from 16 (S) to 92 (U); - contamination elements with atomic surface densities from 1 x 1010 atoms/cm2 to 1 x lOI4 atoms/cm2; - contamination elements with atomic surface densities from 5 x lo8 atoms/cm2 to 5 x 10l2 atoms/cm2 using a VPD (vapour-phase decomposition) specimen prepa- ration method (s
23、ee 3.4). NOTE : The International Standard corresponding to this Standard is as fol- lows. PROTECTED BY COPYRIGHT Copyright Japanese Standards Association Provided by IHS under license with JSALicensee=IHS Employees/1111111001, User=Wing, Bernie Not for Resale, 03/13/2007 23:05:38 MDTNo reproduction
24、 or networking permitted without license from IHS -,-,- 2 K 0148 : 2005 (IS0 14706 : 2000) In addition, symbols which denote the degree of correspondence in the contents between the relevant International Standard and JIS are IDT (identical), MOD (modified), and NEQ (not equivalent) according to ISO
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