SEMI-MF723-2007.pdf
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1、 1 SEMI MF723-0307 SEMI 2005, 2007 SEMI MF723-0307 PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHORUS-DOPED, AND ARSENIC-DOPED SILICON This standard was technically approved by the global Silicon Wafer Committee. This edition was approved for public
2、ation by the global Audits and Reviews Subcommittee on November 21, 2006. It was available at www.semi.org in February 2007 and on CD-ROM in March 2007. Original edition published by ASTM International as ASTM F 723-81; previously published July 2006. 1 Purpose 1.1 Dopant density and resistivity of
3、silicon are two important acceptance parameters used in the interchange of material by consumers and producers in the semiconductor industry. Therefore, a particular method of converting from dopant density to resistivity and vice versa must be available since some test methods measure resistivity w
4、hile others measure dopant density. 1.2 In addition, there are occasions when conversion from resistivity to carrier density is required. 1.3 These conversions are useful in mathematical modeling of semiconductor processing and devices. 1.4 This practice describes conversions between dopant density
5、and resistivity for arsenic-, boron- and phosphorus- doped single crystal silicon and conversions from resistivity to carrier density for boron- and phosphorus doped single crystal silicon at 23C. NOTE 1: Except that it does not include dopant density conversions for arsenic-doped silicon or any car
6、rier density conversions, DIN 50444 is an equivalent practice. 1.5 Despite some experimental limitations, the conversions are more readily established from an empirical database than from theoretical calculations. 1.5.1 The conversions for boron- and phosphorus- doped silicon in this practice are ba
7、sed primarily on the data of Thurber et al.1,2,3 taken on bulk single crystal silicon having dopant density values in the range from 3 1013 cm3 to 1 1020 cm3 for phosphorus-doped silicon and in the range from 1014 cm3 to 1 1020 cm3 for boron-doped silicon. The phosphorus data base was supplemented i
8、n the following manner: two bulk specimen data points of Esaki and Miyahara4 and one diffused specimen data point of Fair and Tsai5 were used to extend the data base above 1020 cm3, and an imaginary point was added at 1012 cm3 to improve the quality of the conversion for low dopant density values. 1
9、.6 A limited additional conversion is given for arsenic-doped silicon, for the doping range 1019 to 6 1020 cm3, where it is shown to differ from the conversion for phosphorus-doped silicon, but it is only available in the direction from dopant density to resistivity. This conversion from Fair and Ts
10、ai 6 was generated using Hall effect measurements covering the this dopant density range. Below this dopant density range, the conversion for phosphorus-doped silicon can be applied to arsenic-doped silicon. NOTE 2: Resistivity may be unambiguously determined throughout the desired resistivity range
11、 regardless of the dopant impurity. However, it was necessary to use a variety of techniques to establish the complete dopant density scale of interest; these techniques do not all respond to the same parameter of the semiconductor. In the experimental work supporting these conversions, capacitance-
12、voltage measurements were used to determine the dopant density of both boron- and phosphorous- doped specimens with dopant densities less than about 1018 cm3. The specimens were assumed to be negligibly compensated; hence, the data given by the capacitance-voltage measurements were taken to be a dir
13、ect measure of the dopant density in the 1 Thurber, W. R., Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon,” J. Electrochem. Soc. 127, 18071812 (1980) 2 Thurber, W. R., Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-
14、Dopant Density Relationship for Boron-Doped Silicon,” J. Electrochem. Soc. 127, 22912294 (1980) 3 Thurber, W. R., Mattis, R. L., Liu, Y. M., and Filliben, J. J., Semiconductor Measurement Technology,“Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon,” NBS Sp
15、ecial Publication 400-64 (April 1981) 4 Esaki, L., and Miyahara, Y., “A New Device Using the Tunneling Process in Narrow p-n Junction,” Solid-State Electron. 1, 1321 (1960) 5 Fair, R. B., and Tsai, J. C. C., “A Quantitative Model for the Diffusing of Phosphorus in Silicon and the Emitter Dip Effect,
16、” J. Electrochem. Soc. 124, 11071118 (1977) 6 Fair, R. B., and Tsai, J. C. C., “The Diffusion of Ion-Implanted Arsenic in Silicon,” J. Electrochem. Soc. 122, 1689 (1975) SEMI MF723-0307 SEMI 2005, 2007 2 specimen. Hall effect measurements were used to obtain dopant density values greater than 1018 c
17、m3. In addition, in this range neutron activation analysis and spectrophotometric analysis were used to determine phosphorus density, and the nuclear track technique was used to determine boron density. Where there were discrepancies in the data from the analytical techniques, more weight was given
18、to the Hall effect results. 2 Scope 2.1 These conversions are based upon data from boron- and phosphorus-doped silicon. They may be extended to other dopants in silicon that have similar activation energies; although the accuracy of conversions for other dopants has not been established, it is expec
19、ted that the phosphorus data would be satisfactory for use with arsenic and antimony, except when approaching solid solubility (see 3.3). 2.2 Conversions between resistivity and dopant density should not be confused with conversions between resistivity and carrier density (see 3.1). Depending on the
20、 desired application, the correct conversion relationship should be applied. NOTE 3: The conversion between resistivity and dopant density compiled by Irvin7 is compared with this conversion (see Related Information 1). In this compilation, Irvin used the term “impurity concentration” instead of the
21、 term “dopant density.” 2.3 The self-consistency of the dopant density conversions (resistivity to dopant density and dopant density to resistivity) (see 7.3.1) is within 3% for boron from 0.0001 to 10,000 cm, (1012 to 1021 cm3) and within 4.5% for phosphorus from 0.00024000 cm (1012 to 5 1020 cm3).
22、 This error increases rapidly if the phosphorus conversions are used for densities above 5 1020 cm3. 2.4 The self-consistency of the carrier density conversions (resistivity to carrier density and carrier density to resistivity) is of similar magnitude.3 NOTICE: This standard does not purport to add
23、ress safety issues, if any, associated with its use. It is the responsibility of the users of this standard to establish appropriate safety and health practices and determine the applicability of regulatory or other limitations prior to use. 3 Limitations 3.1 Carrier Density Attempts to derive carri
24、er density values from resistivity values by using conversions for dopant density are subject to error. While dopant density and carrier density values are expected to be nearly the same at 23 K at low densities (up to about 1017 cm3), the two quantities generally do not have the same value in a giv
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