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1、,芯片元器件(device) Snapshot 2010-07-23 魏文,Confidential & Proprietary 2009,2,Si & Semiconductor PN junction MOS introduce MOS Device 特性 . MOS 2nd order effect (advanced character),Agenda,Confidential & Proprietary 2009,3,元素周期表,P型 掺杂,N型 掺杂,Substrate 衬底,Confidential & Proprietary 2009,4,+14,n=1,n=2,n=3,孤立硅
2、原子,2个电子,8个电子,4个电子,s层有2 个量子态,p层有6个 量子态,1s22s22p63s23p2,Confidential & Proprietary 2009,5,硅原子组成晶体,Confidential & Proprietary 2009,6,N 型-P型 掺杂及其能带示意图,N型 掺杂,P型 掺杂,Confidential & Proprietary 2009,7,PN junction (depletion layer formation),1. Definition: no free carrier 2. Wd: Na/Nd 3. Bais: Forward decrea
3、se Wd,Confidential & Proprietary 2009,8,The Conductivity of PN Junction,R,The current is formed by the movement of the majority carriers.,Two types of movements: majority carriers- diffuse movement (扩散运动). minority carriers drift movement(漂移运动).,N 型 掺杂,P 型 掺杂,Confidential & Proprietary 2009,9,The Co
4、nductivity of PN Junction,正偏,导通 电压,反偏击穿电压,反偏,Reverse Breakdown 反向击穿,pn junction characteristic curve (伏安特性曲线),The most important characteristic of PN junction is that it allows current in only one direction. PN结的最重要特性是它的单向导电性。,Confidential & Proprietary 2009,10,Whats MOS,Metal,Oxide,Semi,Confidentia
5、l & Proprietary 2009,11,MOS skeleton,Why called source/drain? Can you figure out which side is source/drain in previous slice? Always remember, MOS is four terminal (including Bulk).,Confidential & Proprietary 2009,12,NMos transistor_Channel formation,No Channel, Ids=0,Channel form, Ids flow from D
6、to S,Ids increase with Vds, similar to linear Resistor,Channel pinch off. Ids independent of Vds andsimilar to current source,Confidential & Proprietary 2009,13,As VDS is increased:,As VGS-VDS Vt the drain end Pinch-Off; At this moment, VDS=VDS,sat saturation voltage = VGS-Vt If VDS VDS,sat operatio
7、n in “saturation region”; If VDS VDS,sat operation in “triode region”,NMos how to work (backup),Confidential & Proprietary 2009,14,Transfer/Output,In the linear region the MOSFET behaves as a resistor controlled by VG. In saturation, it behaves as a current generator controlled by VG.,If VGS is VDsa
8、t(VGS), the behavior is linear with slope .,Confidential & Proprietary 2009,15,WAT testkey structure and test method_ Vt,Test condition: VTI_N18: VD=0.05V, VS=VB=0V, VG=0V TO 0.8*1.8V MEASURE VTI_N18=VGID = 0.1A*(W/L),Test result:VG=0.445V,VTI_NAA18_10_D18,Confidential & Proprietary 2009,16,SCE (sho
9、rt channel effect),What: Short Channel Effect, Vt decrease along with channel Length. Why: S/D lateral diffuse(0.7 Xj) and depletion extension into channel cause Leff reduce. How: Tox; Nb ; Xj ; Vsb,Confidential & Proprietary 2009,17,PT (Punch through),Confidential & Proprietary 2009,18,Junction Bre
10、akdown,Confidential & Proprietary 2009,19,Body effect,What: Vt increase with Vsouce - Vbulk Why: Vsb increase the S/D depletion layer, which attract more electrons and cause channel inversion layer electron loss, request more Gate effect. How: Tox; Nb ;,Confidential & Proprietary 2009,20,What: Gate
11、Induced Drain Leakage, big leakage current in drain side especial when Vg d0. Why: Gate to Drain overlay area generate high field, lead to avalanche multiplication and BTBT. How: Vg; Na ; Vd,GIDL,Confidential & Proprietary 2009,21,Leakage,I1: Junction leak I2: sub-threshold leakage I3: OX tunneling current I4: Gate Hot carries leakage I5: GIDL I6: Punch through,Confidential & Proprietary 2009,22,Thank You !,
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