硫酸铜填孔电镀理论.ppt

硫酸銅填孔電鍍理論-有機物質成分,Organic additives Organic additive species Brightener/accelerator Carrier/suppressor Leveller,電鍍反應 : ( 摘要) 可溶解性陽極,Function 1 Reduce the activation energy and increase Cu deposition rate Additive can be monitored by CVS using standard addition method or Hull Cell,Additive Chemistry,Function 2 The side chains on the additive molecule has a barrier for Cu+ to deposit onto the surface. The probability to fill in steps and vacancies on the surface increases.,Additive Chemistry (Cont.),Function 3 The coverage of the additive on the surface enhanced nucleation and formation of randomly oriented grains. Allows the formation a microstructure with interlocking of randomly oriented grains.,Additive Chemistry (Cont.),Decomposition of additive on Cu surface, such as anode,2S(-1) + 2e- 2S(-2) Cu Cu2+ + 2e-,Occurred mainly during bath idling Air bubbling during idling can usually solve the by-product formation issue,Control of additive content,By-product speeds up the Cu deposition at least 20 times,A bath dominated by the by-product gives columnar microstructure,Control of Additive content (Cont.),Additive 濃度對電鍍效率的影響,硫酸銅填孔電鍍 : Leveler dominate V.S no Leveler 系統比較,Mechanism of thin knee,Carrier #1,Brightener #1,leveler,Carrier #2,Brightener #2,Competitors,MicroFill,Via Fill deposition mode,Mechanism of viafilling,Normal,Accumulation of BP,填孔藥水之成分及功能- 範例介紹,不同電流密度下,Additive , carrier 對電鍍效率的影響,