1、INTERNATIONA1.STANDARDISO4825-1editionFirst202301Fineceramics(advancedceramics,advancedtechnica1.ceramics)一Testmethodfortherma1.propertymeasurementsofmeta1.izedceramicsubstrates一FyNqgtionoftherma1.resistanceforuseinpowermodu1.esCeramiquestechniquesMethodedessaipourIeSmesuresdesproprietyChermiquesdes
2、substratsCeramiquesmeta1.1.isesPartie1:Eva1.uationdeIaresistancethenniquepouruti1.isationdansIesmodu1.esd1.a1.imentationReferencenumberISO48251.2023(E)ISO2023COPYRIGHTPROTECTEDDOCUMENTISO2023IUirhM*hedbdi1.iUedotherwiseupdhi.or啪UIBndttaeDmkfifiHipB1.andonnet8CH-1214Vernier,GenevaPhone：M1.22749O1.11觥
3、ftte:丽丽BQrgPub1.ishedinSwitzer1.andContentsForewordItroductionNormativereferencesTermsanddefinitions*三*Apparatus2Procedure6.2Testenvironments76.2Testenvironments7Ca1.cu1.ation8Testreport8Ca1.cu1.ation8Testreport8Annex A (informative)Examp1.eofset-upapparatus9Annex B (informative)Inter1.aboratoryeva1
4、uationoftherma1.resistancemeasurements10Bib1.iography一.一.12ForewordISO(theInternationa1.OrganizationforStandardization)isawor1.dwidefederationofnationa1.standardsthtiugh(ISOtchn0ibMriiRj)tvcekuPWf1.PbrjGgbOdy1.nrf1.rOaiiaHI6tanddki4oTOWhidbtarrteswww4sGFgGbp3.1meta1.izedceramicsubstrate3.2therma1.r
5、esistanceacrosstothicknessWhendocumenttherma1.resistanceexpressedunittheIemperatureunitditTerenceinresistanceisSOURCE:IEC60747-15:2010,3.1,modifiedDefinitionrevisedandnotetoentryadded.)ISO2023-A1.1.rightsreservedPart1:Thisdocumentspecifiesamethodformeasuringthetherma1.resistancebetweenaheaterchipand
6、aco1.dp1.atewiththepowerchipThisonmeta1.izedceramicanindexoftheheatcarbidecharacteristicsofameta1.1.izedceramicsubstrateusedinahigh-outputpowermodu1.e.Thefo1.1.owingdocumentsarereferredtointhetextinsuchawaythatsomeora1.1.oftheircontentundatedreferences,theofthisoftheFordateddocumenton1.yIheanycditio
7、ncitedForISO554rStandardatmospheresforconditioningand/ortestingSpecifications360584-1,Thermocoup1.esISOandIECmaintaintermino1.ogydatabasesforuseinstandardizationatthefo1.1.owingaddresses:IECE1.ectropec1.ia:avai1.ab1.eathttps:/www.e1.ectropedia.org/componentinwhichmeta1.1.iccircuit1.ayersarejoinedtoa
8、ceramicsubstratetherma1.proper1.yrepresentingresistancetoheatf1.owfromahighertemperatureareatoaIosvertemperatureareainaStnictureenergyf1.owsIsthroughRInastime.TheSIofIhernw1.thestructureNote1aentry：In(hisaunitofKW.3.3therma1.conductivityquotientoftheamountofheatf1.owperunitoftimethroughaunitofsurfac
9、eareaperpendicu1.artotheheatf1.owinaso1.idmateria1.,dividedbythetemperaturedifferenceperunit1.ength(temperaturegradient)Nc1toentry:TheSIunitoftherma1.conductivityisW(mK).therma1.interfacemateria1.TIMmateria1.whichfi1.1.ssma1.1.gapsorirregu1.aritiesbetweencomponentsandhasthefunctionofefficient1.ytran
10、sferringheatproducedbyadevicetoaheat-dissipatingcomponentEXAMP1.ETherma1.1.yconductivegreases,si1.iconesheets,graphitesheets.4 Princip1.eThetherma1.resistancebetweenaheaterchipandaco1.dp1.ateinadirectionperpendicu1.artothepktathUeti&aairaimoHycdi11Hngedtft1.)firedtprencbetaveenheMCermcchzaidthrridsu
11、bstratebearingtheheaterchipisbondedtotheco1.dp1.ate.Theco1.dp1.ateistemperature-contro1.1.edbyachi1.1.er.Thisca1.cu1.ationmethodminimizestheerrorintherma1.resistanceva1.uethatdeve1.ops怖强用物牌的VrOjKt9曲却册出曲格斯设电1.eases.Annexift,ter1.aboratorycomparisonstudy5 ApparatusFigure1presentsaschematicofthetestapp
12、aratus,whichiscomposedofthefo1.1.owingmaine1.ements.NoteSccAnncxAforanexamp1.eofadetai1.edset-upfortherma1.resistancemeasurement.2 heaterchip8temperaturesensor3 co1.dp1.ate9supp1.yofe1.ectricity4 chi1.1.er10recordingvo1.tageande1.ectriccurrent5 powersupp1.y11turningon/offpower6 contro1.1.erandrecord
13、erFigure1-I1.1.ustrationoftherma1.resistancemeasurementapparatus5.1Meta1.izedceramicsubstrate.Un1.essOthersvisespecified,useameta1.izcdceramicsubstratewithaconfigurationasshowninFigure2.Themeta1.1.icpatternonthefrontofthemeta1.1.izedceramicsubstratesha1.1.inc1.udeaninsta1.1.ationareaforbondingthehea
14、terchipandat1.eastfoure1.ectrodepadsdMtthiUydn?JEfiMCdufc1.taUBBthiSi11TmstaiIihM1.kUjfithttsubstraietrf1.ft1.1.d?Unn1.nIIIayUbStratdKhaibattpaeedspecifica1.1.y.c)SchematicfromthesideI1.2 meta1.1.ayer(front)5adhesion1.ocationforheaterchip3 meta1.1.ayer(back)Figure2Congurationofneta1.izedceramicsubst
15、ratefortherma1.resistancemeasurement5.2Heaterchiptoimitateasemiconductorchip.Itiscomposedofasubstrateonwhichaheatinge1.ement,atemperaturesensorande1.ectrodepadsareformed.Theheaterchipsha1.1.befabricatedusingaSiCsing1.ecrysta1.orasubstratehavinganequiva1.entorgreatertherma1.conductivity.Un1.essotheun
16、cdietfied,gecatedbjtbkdi)Hed5ipnssha1.1.be2（三）mib5gre)tBr.(thDhoesshe0t6nhiFiik)nMieasensorfortemperaturemeasurement.Theheaterchipsha1.1.haveaheatresistanceof250ormore,giventhetemperatureduringheatgenerationandthetemperahireintheprocessofjoiningtoa科班斯腕串t。Ce程麻atesubstr坪断解端出就dm拈砌拈码础员0郴也周岫艇mByM布访substr
17、atemadeofSiCwaferusedasawidebandgapsemiconductor.E1.ectrodepadsa1.1.owingadditiona1.wirebondingfromtheheatere1.ementandthetemperatureprobearefonne1.onthesurfaceofthechip此H蝌监锦福啊科展th8招ffit拆侧监壮醐胡济e三丽为港岷福thechangeinresistanceva1.ue.122thinFigure3-Anexamp1.eofaheaterchipwithametaf1.hinfi1.mtemperaturepro
18、be5.3backaConnectedthetemperatureofc(1.ingmediakeptatpredeterminedtemperature.ofaco1.dp1.ateaffectsthemeasuredtherma1.resistance,thesameco1.dp1.atesha1.1.beusedinaseriesofg平SUrement.Aco1.dp1.atehavingdimensions1.argerthan60mm60mm*20mmshou1.dbeused.Chi1.1.erformaintainingtheco1.dp1.ateataconstant,1.o
19、wtemperature.Toachievemeasurementinatherma1.1.ysteadystateinthemeasurementoperation,thechi1.1.ersha1.1.haveacoo1.ingcapacityat侥删XHCHfMH加MbirtWXd*Hd川QibaI曲屈A益杷正P1.UVie11祠rf8初w*thcgRequiredtokeeptheseexperimenta1.conditionsthesameinaseriesofmeasurement.Powersupp1.ytosupp1.ye1.ectrica1.powerforheatingt
20、heheaterchip.Astabi1.izedDCpowersource5.6Contro1.1.crandtosimu1.taneous1.ye1.trka1.powerWhIChheatstheIwaterdup,thetemperatureWgtrica1.powerforheating.inIECThermocoup1.emeasuringco1.dp1.atetemperature.Itisstab1.euptothemeasurementtemperahire6Procedure6.1Set-upa)heaterchipsha1.1.bejoinedfirm1.ytothefr
21、ontJudexentreofthemeta1.1.izedceramicsubstratebjcasurcrnc11Qfjoti1.ogmateria1.Mfur1.dshowhaudbdBUixdnihICeIdttiymMiMIasiiuuabUihbathicknessthatisasthinaspossib1.e.Thejoining1.ayerbetweenthemeta1.1.izedceramicsubstrateandheaterchipsha1.1.haveaheatresistanceequa1.toorgreaterthanthepeaktemperatureofthe
22、chip1.tfwdsha1.1.dStherma1.resistancemeasHQE4%atePr曲适3明MkgHsnateri+oi3HVf(3pastedie-at1.achmateria1.ssuchasAu-baseda1.1.oy.Cubaseda1.1.oy,Znbaseda1.1.oyandsinteringdie-attachmateria1.ssuchasgsinteredpasteandCusinteredpaste.b) nxdhuttdqUk1.fortiUn1.?hbNfomiHj?IrU1.anS*a6EbhChrtd1.hficdra!ibetsvt1.h阳牺
23、Otherwisetherma1.conductivity1.owerthan30W(mK)andtheirheadsshou1.dbespherica1.Representativemeta1.usedforthesupportingrodisstain1.essstee1.0sAfiVBh1.H或attachedtiT行见赊如松曲用r1hfiJiate.dM曲能三fiA三gedthermocoup1.eisac1.ass1K-thermocoup1.e.)Wh煽dpr。J触部传M*M&懈精1战un8即Recordtest工一W“I一-WV一atmospherictemperaturedur
24、ingexperimentation.做et1.蚓izedre卿胭mea鸵碘，帆燃喇CationI掇阶嘏dditiont刷hermWi1.三betweentheheaterchipandthemeta1.1.izedceramicsubstrate.Consequent1.y,whencomparingtheheat-dissipatingcharacteristicsofmeta1.1.izedceramicsubstrates,itisimportantthattheset-upformeasurementsisconductedundertharneCondAions.heaterchi
25、pwirebondingmeta!1.ayerfore1.ectrode4meta1.1.ayerforbearingheaterchip5ceramicsubstrateFigure4-Schematicofneta1.izedceramicsubstratewithheaterchipandwirebondingb)Schematicfromthetop1 heaterchip2 meta1.izedceramicsubstrate3 co1.dp1.ate力wirebondingTCheaterchiptemperatureco1.dp1.atesurfacetemperature5 t
26、hermocoup1.e6 1.oadapp1.yingsupportingrod7 contactpinforpowersupp1.y8 contactpinfortemperaturemeasurementFigure5-Anexamp1.eofaset-upcongurationfortherma1.resistancemeasurementofameta1.izedceramicsubstratewithaheaterchipadheredtoaco1.dp1.ate6.2 TestenvironmentsASspecifiedbyISO554.theatmospherictemperatureduringmeasurementsha1.1.bestandardtn哪UmtUrerbeh区吊EahfeR6诉a0(Staridsihjd)bjniementn阮ibdQf1.rtfcsao1.ved.%).However,6.3
